BUK752R3-40E,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

109.2nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 25A, 10V

Package / Case :

TO-220-3

Fall Time (Typ) :

46 ns

FET Type :

N-Channel

Power Dissipation-Max :

293W Tc

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Rise Time :

36ns

Vgs(th) (Max) @ Id :

4V @ 1mA

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

8500pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Series :

Automotive, AEC-Q101, TrenchMOS™

Turn On Delay Time :

29 ns

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

Surface Mount :

No

Turn-Off Delay Time :

79 ns

Max Dual Supply Voltage :

40V

Factory Lead Time :

20 Weeks

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2012

Packaging :

Tube

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

622 mJ

Continuous Drain Current (ID) :

120A

Terminal Finish :

Tin (Sn)