BUK7526-100B,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Drain Current-Max (Abs) (ID) :

49A

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

197A

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.026ohm

Pin Count :

3

DS Breakdown Voltage-Min :

100V

Terminal Position :

Single

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 1mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

26m Ω @ 25A, 10V

Packaging :

Tube

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

HTS Code :

8541.29.00.75

Transistor Element Material :

SILICON

Power Dissipation-Max :

157W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2891pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

49A Tc

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

144 mJ

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Series :

TrenchMOS™

Package / Case :

TO-220-3

Number of Elements :

1

Drain to Source Voltage (Vdss) :

100V

JESD-609 Code :

e3

Surface Mount :

No

Published :

2014