BUK7520-100A,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

4373pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

63A Tc

Power Dissipation-Max :

200W Tc

Number of Elements :

1

Pin Count :

3

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

400 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

TrenchMOS™

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.02Ohm

Qualification Status :

Not Qualified

Surface Mount :

No

Reach Compliance Code :

Compliant

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 1mA

Rds On (Max) @ Id, Vgs :

20m Ω @ 25A, 10V

Package / Case :

TO-220-3

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

63A

Packaging :

Tube

DS Breakdown Voltage-Min :

100V

Terminal Position :

Single

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

253A

Operating Temperature :

-55°C~175°C TJ

HTS Code :

8541.29.00.75

JESD-609 Code :

e3