BUK751R8-40E,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Drain Current-Max (Abs) (ID) :

120A

Vgs(th) (Max) @ Id :

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Avalanche Energy Rating (Eas) :

1020 mJ

Surface Mount :

No

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

11340pF @ 25V

DS Breakdown Voltage-Min :

40V

Pin Count :

3

Packaging :

Tube

Number of Elements :

1

Series :

Automotive, AEC-Q101, TrenchMOS™

Drain to Source Voltage (Vdss) :

40V

Reference Standard :

AEC-Q101; IEC-60134

Vgs (Max) :

±20V

Terminal Position :

Single

Mounting Type :

Through Hole

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 25A, 10V

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

1278A

Power Dissipation-Max :

349W Tc

JESD-609 Code :

e3

Package / Case :

TO-220-3

Published :

2012

Drain-source On Resistance-Max :

0.0018Ohm

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V