BUK7516-55A,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 1mA

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Power Dissipation :

138W

Mounting Type :

Through Hole

Rise Time :

70ns

Fall Time (Typ) :

41 ns

Input Capacitance (Ciss) (Max) @ Vds :

2245pF @ 25V

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

JESD-609 Code :

e3

Max Dual Supply Voltage :

55V

Drain-source On Resistance-Max :

0.016Ohm

Current - Continuous Drain (Id) @ 25°C :

65.7A Tc

HTS Code :

8541.29.00.75

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

FET Type :

N-Channel

Number of Elements :

1

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

3.8A

Drain to Source Breakdown Voltage :

55V

Rds On (Max) @ Id, Vgs :

16m Ω @ 25A, 10V

Turn On Delay Time :

16 ns

Pin Count :

3

Avalanche Energy Rating (Eas) :

120 mJ

Drain Current-Max (Abs) (ID) :

65.7A

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Case Connection :

DRAIN

Turn-Off Delay Time :

57 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Power Dissipation-Max :

138W Tc

Series :

TrenchMOS™

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Vgs (Max) :

±20V