BUK7511-55B,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Power Dissipation-Max :

157W Tc

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 1mA

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

338A

Drain Current-Max (Abs) (ID) :

75A

Rds On (Max) @ Id, Vgs :

11m Ω @ 25A, 10V

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.011Ohm

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Series :

TrenchMOS™

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

173 mJ

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

55V

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

55V

Pin Count :

3

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2604pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin (Sn)

HTS Code :

8541.29.00.75

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED