BUK7510-100B,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 1mA

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

75A

Mounting Type :

Through Hole

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Power Dissipation-Max :

300W Tc

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Avalanche Energy Rating (Eas) :

629 mJ

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.01Ohm

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

100V

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

10m Ω @ 25A, 10V

Published :

2012

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

HTS Code :

8541.29.00.75

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Number of Terminations :

3

DS Breakdown Voltage-Min :

100V

Series :

TrenchMOS™

Input Capacitance (Ciss) (Max) @ Vds :

6773pF @ 25V

Package / Case :

TO-220-3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

438A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED