BUK7510-100B,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Series :

TrenchMOS™

Drain-source On Resistance-Max :

0.01Ohm

Transistor Application :

SWITCHING

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

6773pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 1mA

Rds On (Max) @ Id, Vgs :

10m Ω @ 25A, 10V

Power Dissipation-Max :

300W Tc

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Reach Compliance Code :

Compliant

Published :

2012

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

438A

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

100V

Surface Mount :

No

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

75A

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

629 mJ

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin (Sn)

HTS Code :

8541.29.00.75

Case Connection :

DRAIN

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Packaging :

Tube

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V