BUK7508-55A,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2010

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 1mA

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.008Ohm

Avalanche Energy Rating (Eas) :

670 mJ

Packaging :

Tube

ECCN Code :

EAR99

Continuous Drain Current (ID) :

126A

Rise Time :

94ns

Transistor Application :

SWITCHING

Number of Elements :

1

Pin Count :

3

Mounting Type :

Through Hole

Contact Plating :

Tin

RoHS Status :

RoHS Compliant

Max Dual Supply Voltage :

55V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

55V

Surface Mount :

No

Turn-Off Delay Time :

100 ns

Input Capacitance (Ciss) (Max) @ Vds :

4352pF @ 25V

Rds On (Max) @ Id, Vgs :

8m Ω @ 25A, 10V

Pulsed Drain Current-Max (IDM) :

504A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Power Dissipation-Max :

254W Tc

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

80 ns

Package / Case :

TO-220-3

FET Type :

N-Channel

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

75A

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Power Dissipation :

254W

Turn On Delay Time :

24 ns

Vgs (Max) :

±20V

Series :

TrenchMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ