BUK7507-30B,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 1mA

Power Dissipation-Max :

157W Tc

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

HTS Code :

8541.29.00.75

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Avalanche Energy Rating (Eas) :

329 mJ

Drain to Source Voltage (Vdss) :

30V

Pulsed Drain Current-Max (IDM) :

435A

Drain Current-Max (Abs) (ID) :

75A

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Rds On (Max) @ Id, Vgs :

7m Ω @ 25A, 10V

Package / Case :

TO-220-3

DS Breakdown Voltage-Min :

30V

Input Capacitance (Ciss) (Max) @ Vds :

2427pF @ 25V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Transistor Element Material :

SILICON

ECCN Code :

EAR99

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.007Ohm

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Series :

TrenchMOS™

Number of Elements :

1