BUK7506-55A127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Surface Mount :

No

Continuous Drain Current (ID) :

154A

Pulsed Drain Current-Max (IDM) :

616A

Current - Continuous Drain (Id) @ 25°C :

75A Tc

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

55V

Vgs(th) (Max) @ Id :

4V @ 1mA

Turn On Delay Time :

35 ns

Package / Case :

TO-220-3

Contact Plating :

Tin

Pin Count :

3

Drain Current-Max (Abs) (ID) :

75A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

1100 mJ

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

110 ns

Number of Pins :

3

Max Dual Supply Voltage :

55V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Element Configuration :

Single

ECCN Code :

EAR99

Mounting Type :

Through Hole

Turn-Off Delay Time :

155 ns

Vgs (Max) :

±20V

Power Dissipation-Max :

300W Tc

Rise Time :

115ns

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

RoHS Status :

RoHS Compliant

Packaging :

Tube

Series :

Automotive, AEC-Q101, TrenchMOS™

Published :

2011

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 25A, 10V

Number of Elements :

1

Power Dissipation :

300W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.29.00.75