BUK7226-75A118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Published :

2008

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Series :

Automotive, AEC-Q101, TrenchMOS™

Surface Mount :

yes

HTS Code :

8541.29.00.75

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

45A

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

215 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

4V @ 1mA

Drain to Source Voltage (Vdss) :

75V

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Rds On (Max) @ Id, Vgs :

26m Ω @ 25A, 10V

Drain-source On Resistance-Max :

0.026ohm

Pulsed Drain Current-Max (IDM) :

215A

Vgs (Max) :

±20V

Power Dissipation-Max :

158W Tc

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2385pF @ 25V

Terminal Position :

Single

FET Type :

N-Channel

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

75V

Operating Mode :

ENHANCEMENT MODE