BUK6C3R3-75C118
- Mfr.Part #
- BUK6C3R3-75C118
- Manufacturer
- Nexperia
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Datasheet
- Download
- Description
- N CHANNEL TRENCHMOS INTERMEDIATE
- Stock
- 1,961
- In Stock :
- 1,961
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- Manufacturer :
- Nexperia
- Product Category :
- Temperature Sensors - PTC Thermistors
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 2.8V @ 1mA
- RoHS Status :
- RoHS Compliant
- Fall Time (Typ) :
- 165 ns
- Peak Reflow Temperature (Cel) :
- 245
- Turn-Off Delay Time :
- 384 ns
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
- Published :
- 2012
- Turn On Delay Time :
- 45 ns
- FET Type :
- N-Channel
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Vgs (Max) :
- ±16V
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.0051Ohm
- Factory Lead Time :
- 12 Weeks
- Number of Pins :
- 7
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 3.4m Ω @ 90A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 15800pF @ 25V
- Max Dual Supply Voltage :
- 75V
- JESD-609 Code :
- e3
- Pin Count :
- 7
- Terminal Finish :
- Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 181A Tc
- Terminal Form :
- Gull wing
- Power Dissipation :
- 300W
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 560 mJ
- Rise Time :
- 217ns
- Continuous Drain Current (ID) :
- 181A
- Drain to Source Breakdown Voltage :
- 75V
- Packaging :
- Tape and Reel (TR)
- Reference Standard :
- AEC-Q101; IEC-60134
- Power Dissipation-Max :
- 300W Tc
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSSO-G6
- Number of Terminations :
- 6
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 253nC @ 10V
- Mounting Type :
- Surface Mount
- Datasheets
- BUK6C3R3-75C118
N-Channel Tape & Reel (TR) 3.4m Ω @ 90A, 10V ±16V 15800pF @ 25V 253nC @ 10V TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
BUK6C3R3-75C,118 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 560 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 15800pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 75V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 75V.As a result of its turn-off delay time, which is 384 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 45 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 75V.In addition to reducing power consumption, this device uses drive voltage (10V).
BUK6C3R3-75C,118 Features
the avalanche energy rating (Eas) is 560 mJ
a continuous drain current (ID) of 181A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 384 ns
BUK6C3R3-75C,118 Applications
There are a lot of Nexperia USA Inc.
BUK6C3R3-75C,118 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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