BUK6C2R1-55C,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

228A Tc

Number of Elements :

1

Turn-Off Delay Time :

412 ns

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Power Dissipation :

300W

Max Operating Temperature :

175°C

Rds On Max :

2.3 mΩ

Vgs (Max) :

±16V

Rise Time :

206ns

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

300W Tc

Drain to Source Voltage (Vdss) :

55V

Mounting Type :

Surface Mount

Fall Time (Typ) :

190 ns

Series :

Automotive, AEC-Q101, TrenchMOS™

Rds On (Max) @ Id, Vgs :

2.3mOhm @ 90A, 10V

Min Operating Temperature :

-55°C

Number of Pins :

7

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

55V

Packaging :

Tape and Reel (TR)

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

253nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

16000pF @ 25V

Radiation Hardening :

No

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Turn On Delay Time :

43 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

D2PAK

Max Dual Supply Voltage :

55V

Gate to Source Voltage (Vgs) :

16V

Continuous Drain Current (ID) :

228A

Input Capacitance :

16nF

Drain to Source Resistance :

2.3MOhm