BUK663R7-75C,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

156 ns

Gate to Source Voltage (Vgs) :

16V

Turn-Off Delay Time :

412 ns

Rds On (Max) @ Id, Vgs :

4m Ω @ 25A, 10V

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Factory Lead Time :

26 Weeks

Case Connection :

DRAIN

Max Dual Supply Voltage :

75V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

306W

Pin Count :

3

Drain to Source Breakdown Voltage :

75V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2010

Element Configuration :

Single

Rise Time :

81ns

Power Dissipation-Max :

306W Tc

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

234nC @ 10V

Continuous Drain Current (ID) :

120A

Surface Mount :

yes

Series :

Automotive, AEC-Q101, TrenchMOS™

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

15450pF @ 25V

Vgs (Max) :

±16V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Number of Elements :

1

Drain-source On Resistance-Max :

0.0058ohm

Transistor Application :

SWITCHING

FET Type :

N-Channel

Number of Terminations :

2

Turn On Delay Time :

52 ns

Contact Plating :

Tin