BUK663R2-40C,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

204W

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Published :

2010

Turn On Delay Time :

40 ns

Pulsed Drain Current-Max (IDM) :

697A

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

204W Tc

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Reach Compliance Code :

not_compliant

Drain-source On Resistance-Max :

0.0057Ohm

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Continuous Drain Current (ID) :

100A

Number of Terminations :

2

Number of Elements :

1

Max Dual Supply Voltage :

40V

FET Type :

N-Channel

Rise Time :

87ns

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 25A, 10V

Transistor Element Material :

SILICON

Surface Mount :

yes

Fall Time (Typ) :

117 ns

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

40V

Turn-Off Delay Time :

224 ns

Case Connection :

DRAIN

Factory Lead Time :

16 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

8020pF @ 25V

Contact Plating :

Tin

Series :

Automotive, AEC-Q101, TrenchMOS™

Vgs (Max) :

±16V