BUK662R7-55C

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

258nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Published :

2010

Lead Free :

Lead Free

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Rise Time :

101ns

Turn-Off Delay Time :

450 ns

JESD-609 Code :

e3

Surface Mount :

yes

Terminal Form :

Gull wing

Power Dissipation-Max :

306W Tc

Fall Time (Typ) :

186 ns

Packaging :

Tape and Reel (TR)

Max Dual Supply Voltage :

55V

Avalanche Energy Rating (Eas) :

724 mJ

Drain to Source Breakdown Voltage :

55V

Input Capacitance (Ciss) (Max) @ Vds :

15300pF @ 25V

Pin Count :

3

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Series :

Automotive, AEC-Q101, TrenchMOS™

Vgs (Max) :

±16V

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.8V @ 1mA

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Number of Pins :

3

Reach Compliance Code :

not_compliant

Resistance :

2.7MOhm

Element Configuration :

Single

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

907A

Power Dissipation :

306W

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

16 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

61 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

120A

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

16V

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 25A, 10V