BUK662R7-55C,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Vgs (Max) :

±16V

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 25A, 10V

Pin Count :

3

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

258nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Avalanche Energy Rating (Eas) :

724 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

450 ns

RoHS Status :

Non-RoHS Compliant

Published :

2010

Continuous Drain Current (ID) :

120A

Fall Time (Typ) :

186 ns

Surface Mount :

yes

Gate to Source Voltage (Vgs) :

16V

Power Dissipation-Max :

306W Tc

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

907A

Factory Lead Time :

16 Weeks

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Resistance :

2.7MOhm

Mounting Type :

Surface Mount

FET Type :

N-Channel

Series :

Automotive, AEC-Q101, TrenchMOS™

Number of Elements :

1

Lead Free :

Lead Free

Turn On Delay Time :

61 ns

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

15300pF @ 25V

Power Dissipation :

306W

Contact Plating :

Tin

Rise Time :

101ns

Max Dual Supply Voltage :

55V

Drain to Source Breakdown Voltage :

55V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single