BUK661R8-30C,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

120A

Factory Lead Time :

12 Weeks

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Power Dissipation :

263W

Rds On (Max) @ Id, Vgs :

1.9m Ω @ 25A, 10V

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

272 ns

Series :

Automotive, AEC-Q101, TrenchMOS™

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Element Configuration :

Single

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rise Time :

93ns

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Gate Charge (Qg) (Max) @ Vgs :

168nC @ 10V

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

263W Tc

Number of Pins :

3

Number of Terminations :

2

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

870 mJ

Input Capacitance (Ciss) (Max) @ Vds :

10918pF @ 25V

Turn On Delay Time :

43 ns

Gate to Source Voltage (Vgs) :

16V

Fall Time (Typ) :

142 ns

Surface Mount :

yes

Mounting Type :

Surface Mount

Vgs (Max) :

±16V

Max Dual Supply Voltage :

30V

Terminal Form :

Gull wing

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3