BUK6607-55C,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

16V

Contact Plating :

Tin

JESD-30 Code :

R-PSSO-G2

Published :

2010

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

JESD-609 Code :

e3

Turn-Off Delay Time :

165 ns

Turn On Delay Time :

18 ns

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

420A

Element Configuration :

Single

Series :

Automotive, AEC-Q101, TrenchMOS™

Case Connection :

DRAIN

Pin Count :

3

Rise Time :

44ns

Power Dissipation :

158W

Continuous Drain Current (ID) :

100A

Number of Pins :

3

Vgs(th) (Max) @ Id :

2.8V @ 1mA

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

55V

Factory Lead Time :

12 Weeks

Number of Terminations :

2

Power Dissipation-Max :

158W Tc

Max Dual Supply Voltage :

55V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Fall Time (Typ) :

78 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±16V

Surface Mount :

yes

FET Type :

N-Channel

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

5160pF @ 25V

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 25A, 10V

Packaging :

Tape and Reel (TR)