BUK652R0-30C,127
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- Mfr.Part #
- BUK652R0-30C,127
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 120A TO220AB
- Stock
- 31,182
- In Stock ：
- 31,182
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 30V
- Series :
- TrenchMOS™
- Package / Case :
- TO-220-3
- RoHS Status :
- Non-RoHS Compliant
- Source Url Status Check Date :
- 2013-06-14 00:00:00
- Vgs (Max) :
- ±16V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 14964pF @ 25V
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Vgs(th) (Max) @ Id :
- 2.8V @ 1mA
- Rds On (Max) @ Id, Vgs :
- 2.2m Ω @ 25A, 10V
- Power Dissipation-Max :
- 306W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 229nC @ 10V
- FET Type :
- N-Channel
- Published :
- 2010
- Datasheets
- BUK652R0-30C,127
N-Channel Tube 2.2m Ω @ 25A, 10V ±16V 14964pF @ 25V 229nC @ 10V 30V TO-220-3
BUK652R0-30C,127 Overview
A device's maximal input capacitance is 14964pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
BUK652R0-30C,127 Features
a 30V drain to source voltage (Vdss)
BUK652R0-30C,127 Applications
There are a lot of NXP USA Inc.
BUK652R0-30C,127 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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