BUK6217-55C,118
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- Mfr.Part #
- BUK6217-55C,118
- Manufacturer
- Nexperia
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 44A DPAK
- Stock
- 89,022
- In Stock ：
- 89,022
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 44A
- Gate to Source Voltage (Vgs) :
- 16V
- Rds On (Max) @ Id, Vgs :
- 19m Ω @ 12A, 10V
- Vgs(th) (Max) @ Id :
- 2.8V @ 1mA
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- RoHS Status :
- Non-RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1950pF @ 25V
- Fall Time (Typ) :
- 45.6 ns
- Drain to Source Breakdown Voltage :
- 55V
- Published :
- 2010
- Max Dual Supply Voltage :
- 55V
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Vgs (Max) :
- ±16V
- Pin Count :
- 3
- Power Dissipation :
- 80W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Turn-Off Delay Time :
- 56 ns
- Turn On Delay Time :
- 9.8 ns
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 33.8nC @ 10V
- Rise Time :
- 29.7ns
- Power Dissipation-Max :
- 80W Tc
- Datasheets
- BUK6217-55C,118
N-Channel Tape & Reel (TR) 19m Ω @ 12A, 10V ±16V 1950pF @ 25V 33.8nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
BUK6217-55C,118 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1950pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 44A amps.In this device, the drain-source breakdown voltage is 55V and VGS=55V, so the drain-source breakdown voltage is 55V in this case.It is [56 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 9.8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.As it is powered by 55V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
BUK6217-55C,118 Features
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 56 ns
BUK6217-55C,118 Applications
There are a lot of Nexperia USA Inc.
BUK6217-55C,118 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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