BUK6217-55C,118
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- Mfr.Part #
- BUK6217-55C,118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 44A DPAK
- Stock
- 89,022
- In Stock ：
- 89,022
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Turn On Delay Time :
- 9.8 ns
- Vgs(th) (Max) @ Id :
- 2.8V @ 1mA
- Rds On (Max) @ Id, Vgs :
- 19m Ω @ 12A, 10V
- Factory Lead Time :
- 12 Weeks
- Contact Plating :
- Tin
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Element Configuration :
- Single
- Fall Time (Typ) :
- 45.6 ns
- Turn-Off Delay Time :
- 56 ns
- Power Dissipation-Max :
- 80W Tc
- Number of Elements :
- 1
- Max Dual Supply Voltage :
- 55V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~175°C TJ
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1950pF @ 25V
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 16V
- Drain to Source Breakdown Voltage :
- 55V
- Vgs (Max) :
- ±16V
- Gate Charge (Qg) (Max) @ Vgs :
- 33.8nC @ 10V
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 29.7ns
- Continuous Drain Current (ID) :
- 44A
- Power Dissipation :
- 80W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- FET Type :
- N-Channel
- RoHS Status :
- Non-RoHS Compliant
- Published :
- 2010
- Radiation Hardening :
- No
- Datasheets
- BUK6217-55C,118
N-Channel Tape & Reel (TR) 19m Ω @ 12A, 10V ±16V 1950pF @ 25V 33.8nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
BUK6217-55C,118 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1950pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 44A amps.In this device, the drain-source breakdown voltage is 55V and VGS=55V, so the drain-source breakdown voltage is 55V in this case.It is [56 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 9.8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.As it is powered by 55V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
BUK6217-55C,118 Features
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 56 ns
BUK6217-55C,118 Applications
There are a lot of Nexperia USA Inc.
BUK6217-55C,118 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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