BUJD203A,127
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- Mfr.Part #
- BUJD203A,127
- Manufacturer
- WeEn Semiconductors Co., Ltd
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 425V 4A TO220AB
- Stock
- 48,247
- In Stock ：
- 48,247
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- Manufacturer :
- WeEn Semiconductors Co., Ltd
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- BUJD203A
- JEDEC-95 Code :
- TO-220AB
- Polarity/Channel Type :
- NPN
- Reference Standard :
- IEC-60134
- Packaging :
- Tube
- Voltage - Collector Emitter Breakdown (Max) :
- 425V
- Surface Mount :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 600mA, 3A
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PSFM-T3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Current - Collector Cutoff (Max) :
- 100μA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 11 @ 2A 5V
- Case Connection :
- COLLECTOR
- Power - Max :
- 80W
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3
- Current - Collector (Ic) (Max) :
- 4A
- Transistor Application :
- SWITCHING
- Datasheets
- BUJD203A,127
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUJD203A,127 Overview
This device has a DC current gain of 11 @ 2A 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 600mA, 3A means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 425VV - Maximum voltage.
BUJD203A,127 Features
the DC current gain for this device is 11 @ 2A 5V
the vce saturation(Max) is 1V @ 600mA, 3A
BUJD203A,127 Applications
There are a lot of WeEn Semiconductors
BUJD203A,127 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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