BUH100G
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- Mfr.Part #
- BUH100G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 10A TO220
- Stock
- 7,374
- In Stock ：
- 7,374
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Operating Temperature :
- -60°C~150°C TJ
- Supplier Device Package :
- TO-220AB
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 1.5A, 7A
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 5A 5V
- Frequency - Transition :
- 23MHz
- Current - Collector Cutoff (Max) :
- 100μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 10A
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3
- Power - Max :
- 100W
- Series :
- SWITCHMODE™
- Transistor Type :
- NPN
- Datasheets
- BUH100G
NPN -60°C~150°C TJ 100μA TO-220-3 Tube Through Hole
BUH100G Overview
In this device, the DC current gain is 10 @ 5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 1.5A, 7A.Supplier device package TO-220AB comes with the product.The device exhibits a collector-emitter breakdown at 400V.
BUH100G Features
the DC current gain for this device is 10 @ 5A 5V
the vce saturation(Max) is 750mV @ 1.5A, 7A
the supplier device package of TO-220AB
BUH100G Applications
There are a lot of Rochester Electronics, LLC
BUH100G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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