BUD42D
- Mfr.Part #
- BUD42D
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 350V 4A DPAK
- Stock
- 12,200
- In Stock :
- 12,200
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current Rating :
- 2A
- Lead Free :
- Contains Lead
- Max Collector Current :
- 4A
- Power - Max :
- 25W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- JESD-609 Code :
- e0
- Number of Elements :
- 1
- hFE Min :
- 8
- Collector Emitter Saturation Voltage :
- 200mV
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- RoHS Status :
- Non-RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 9V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Reach Compliance Code :
- not_compliant
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 350V
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 240
- Packaging :
- Tube
- Base Part Number :
- BUD42
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 350V
- Collector Base Voltage (VCBO) :
- 650V
- Collector Emitter Voltage (VCEO) :
- 1V
- Operating Temperature :
- -65°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 2A 5V
- Current - Collector Cutoff (Max) :
- 100μA
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 2A
- Max Power Dissipation :
- 25W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Published :
- 2009
- Additional Feature :
- BUILT-IN ANTISATURATION NETWORK
- Case Connection :
- COLLECTOR
- Datasheets
- BUD42D

NPN -65°C~150°C TJ 100μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount
BUD42D Overview
In this device, the DC current gain is 10 @ 2A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 500mA, 2A.With the emitter base voltage set at 9V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BUD42D Features
the DC current gain for this device is 10 @ 2A 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 1V @ 500mA, 2A
the emitter base voltage is kept at 9V
the current rating of this device is 2A
BUD42D Applications
There are a lot of ON Semiconductor
BUD42D applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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