BUB941ZT
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- Mfr.Part #
- BUB941ZT
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN DARL 350V 15A D2PAK
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity :
- NPN
- Transistor Type :
- NPN - Darlington
- Current - Collector Cutoff (Max) :
- 100μA
- Operating Temperature :
- 175°C TJ
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 150W
- Collector Base Voltage (VCBO) :
- 5V
- Continuous Collector Current :
- 15A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 5A 10V
- Collector Emitter Voltage (VCEO) :
- 350V
- Power Dissipation :
- 150W
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 15A
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 250mA, 10A
- Base Part Number :
- BUB941
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Packaging :
- Tube
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Case Connection :
- COLLECTOR
- Transistor Application :
- AMPLIFIER
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Breakdown Voltage :
- 350V
- Pin Count :
- 4
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- hFE Min :
- 300
- Collector Emitter Saturation Voltage :
- 1.8V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Peak Reflow Temperature (Cel) :
- 245
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Datasheets
- BUB941ZT
BUB941ZT Documents
NPN - Darlington 175°C TJ 100μA 1 Elements 2 Terminations SILICON TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount
BUB941ZT Overview
In this device, the DC current gain is 300 @ 5A 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 250mA, 10A.A 15A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
BUB941ZT Features
the DC current gain for this device is 300 @ 5A 10V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 250mA, 10A
the emitter base voltage is kept at 5V
BUB941ZT Applications
There are a lot of STMicroelectronics
BUB941ZT applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BUB941ZTT4 | STMicroelectronics | 51 | TRANS NPN DARL 350V 15A D2PAK |
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