BUB941ZT
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- Mfr.Part #
- BUB941ZT
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN DARL 350V 15A D2PAK
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN - Darlington
- Max Power Dissipation :
- 150W
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100μA
- JESD-609 Code :
- e3
- hFE Min :
- 300
- Pin Count :
- 4
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 250mA, 10A
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 5V
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 175°C TJ
- Packaging :
- Tube
- JESD-30 Code :
- R-PSSO-G2
- Max Collector Current :
- 15A
- Polarity :
- NPN
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Pins :
- 3
- Continuous Collector Current :
- 15A
- Number of Elements :
- 1
- Power Dissipation :
- 150W
- Peak Reflow Temperature (Cel) :
- 245
- Collector Emitter Breakdown Voltage :
- 350V
- Collector Emitter Voltage (VCEO) :
- 350V
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Collector Emitter Saturation Voltage :
- 1.8V
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 5A 10V
- Base Part Number :
- BUB941
- Datasheets
- BUB941ZT
NPN - Darlington 175°C TJ 100μA 1 Elements 2 Terminations SILICON TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tube Surface Mount
BUB941ZT Overview
In this device, the DC current gain is 300 @ 5A 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 250mA, 10A.A 15A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
BUB941ZT Features
the DC current gain for this device is 300 @ 5A 10V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 250mA, 10A
the emitter base voltage is kept at 5V
BUB941ZT Applications
There are a lot of STMicroelectronics
BUB941ZT applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BUB941ZTT4 | STMicroelectronics | 51 | TRANS NPN DARL 350V 15A D2PAK |
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