BU941ZPFI
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- Mfr.Part #
- BU941ZPFI
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-3PF
- Datasheet
- Download
- Description
- TRANS NPN DARL 350V 15A TO3PF
- Stock
- 16,078
- In Stock ：
- 16,078
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 15A
- Max Breakdown Voltage :
- 350V
- Height :
- 15.2mm
- Collector Emitter Breakdown Voltage :
- 350V
- Radiation Hardening :
- No
- Continuous Collector Current :
- 15A
- Packaging :
- Tube
- Power Dissipation :
- 65W
- Package / Case :
- TO-3PF
- Base Part Number :
- BU941
- Max Collector Current :
- 15A
- Current Rating :
- 15A
- Supplier Device Package :
- TO-3PF
- Series :
- Automotive
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 5A 10V
- hFE Min :
- 300
- Transistor Type :
- NPN - Darlington
- Power - Max :
- 65W
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 175°C
- Collector Emitter Saturation Voltage :
- 1.8V
- Voltage - Collector Emitter Breakdown (Max) :
- 350V
- Current - Collector Cutoff (Max) :
- 100μA
- Mounting Type :
- Through Hole
- Weight :
- 6.961991g
- Min Operating Temperature :
- -65°C
- Polarity :
- NPN
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Operating Temperature :
- 175°C TJ
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 350V
- Number of Pins :
- 3
- Length :
- 15.7mm
- Width :
- 5.7mm
- Max Power Dissipation :
- 65W
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Through Hole
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Voltage (VCEO) :
- 350V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 12A
- Datasheets
- BU941ZPFI
NPN - Darlington 175°C TJ 100μA 1 Elements TO-3PF Tube Through Hole
BU941ZPFI Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 5A 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.8V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 300mA, 12A.Single BJT transistor is recommended to keep the continuous collector voltage at 15A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 350V volts.This product comes in a TO-3PF device package from the supplier.Device displays Collector Emitter Breakdown (350V maximal voltage).Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
BU941ZPFI Features
the DC current gain for this device is 300 @ 5A 10V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 2V @ 300mA, 12A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
the supplier device package of TO-3PF
BU941ZPFI Applications
There are a lot of STMicroelectronics
BU941ZPFI applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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