BU406-S

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Mfr.Part #
BU406-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 140V 7A TO220
Stock
1,125
In Stock :
1,125

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
140V
Configuration :
Single
Packaging :
Bulk
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
60W
Current - Collector Cutoff (Max) :
100μA
hFE Min :
12
Radiation Hardening :
No
Mount :
Through Hole
Emitter Base Voltage (VEBO) :
6V
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Base Voltage (VCBO) :
400V
Max Power Dissipation :
60W
Number of Pins :
3
Published :
1993
Polarity/Channel Type :
NPN
Base Part Number :
BU406
Transistor Type :
NPN
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
1V @ 500mA, 5A
Max Collector Current :
7A
Package / Case :
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce :
12 @ 4A 10V
Frequency :
6MHz
Gain Bandwidth Product :
6MHz
Mounting Type :
Through Hole
Collector Emitter Voltage (VCEO) :
200V
Datasheets
BU406-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BU406-S from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Base Part Number:BU406, Package / Case:TO-220-3, Mounting Type:Through Hole, BU406-S pinout, BU406-S datasheet PDF, BU406-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BU406-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BU406-S


NPN -55°C~150°C TJ 100μA 1 Elements NPN TO-220-3 Bulk Through Hole

BU406-S Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 12 @ 4A 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 500mA, 5A.The emitter base voltage can be kept at 6V for high efficiency.Single BJT transistor is possible to have a collector current as low as 7A volts at Single BJT transistors maximum.

BU406-S Features


the DC current gain for this device is 12 @ 4A 10V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 6V


BU406-S Applications


There are a lot of Bourns Inc.
BU406-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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