BTS7904SAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Avalanche Energy Rating (Eas) :

200 mJ

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-5

Surface Mount :

No

DS Breakdown Voltage-Min :

55V

Current - Continuous Drain (Id) @ 25°C :

40A

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSFM-T5

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.2V @ 40μA

Drain Current-Max (Abs) (ID) :

40A

Number of Elements :

2

Power - Max :

69W 96W

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0205Ohm

Pulsed Drain Current-Max (IDM) :

160A

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

55V 30V

Input Capacitance (Ciss) (Max) @ Vds :

6100pF @ 25V

Series :

OptiMOS™

Published :

2008

Number of Terminations :

5

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

12m Ω @ 20A, 10V

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

123nC @ 10V

Terminal Form :

THROUGH-HOLE

Packaging :

Tube

FET Type :

N and P-Channel

Reach Compliance Code :

Unknown