BTS7904BATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pulsed Drain Current-Max (IDM) :

160A

Surface Mount :

yes

Terminal Form :

Gull wing

Number of Elements :

2

Series :

OptiMOS™

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.2V @ 40μA

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Type :

N and P-Channel

Drain Current-Max (Abs) (ID) :

40A

Input Capacitance (Ciss) (Max) @ Vds :

6100pF @ 25V

Rds On (Max) @ Id, Vgs :

11.7m Ω @ 20A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

55V 30V

Published :

2008

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0202Ohm

DS Breakdown Voltage-Min :

55V

Current - Continuous Drain (Id) @ 25°C :

40A

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Power - Max :

69W 96W

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

200 mJ

JESD-30 Code :

R-PSSO-G5

Gate Charge (Qg) (Max) @ Vgs :

121nC @ 10V

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Case Connection :

DRAIN