BSV236SPH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Pbfree Code :

yes

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Rise Time :

8.5ns

Voltage - Rated DC :

-20V

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

20V

Series :

OptiMOS™

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

5.7nC @ 4.5V

Package / Case :

6-VSSOP, SC-88, SOT-363

Vgs(th) (Max) @ Id :

1.2V @ 8μA

Terminal Form :

Gull wing

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

-20V

Lead Free :

Contains Lead

Length :

2mm

Vgs (Max) :

±12V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

175m Ω @ 1.5A, 4.5V

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e3

Current Rating :

-1.5A

Factory Lead Time :

10 Weeks

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Power Dissipation-Max :

560mW Ta

FET Type :

P-Channel

Continuous Drain Current (ID) :

1.5A

Published :

2000

Power Dissipation :

560mW

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

12V

Input Capacitance (Ciss) (Max) @ Vds :

228pF @ 15V

Halogen Free :

Halogen Free

Mount :

Surface Mount

Width :

1.25mm