BSV236SP L6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-G6

Power Dissipation-Max :

560mW Ta

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Pin Count :

6

Input Capacitance (Ciss) (Max) @ Vds :

228pF @ 15V

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Package / Case :

6-VSSOP, SC-88, SOT-363

Transistor Element Material :

SILICON

Series :

OptiMOS™

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Drain to Source Voltage (Vdss) :

20V

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

5.7nC @ 4.5V

HTS Code :

8541.21.00.95

Number of Elements :

1

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±12V

Drain-source On Resistance-Max :

0.175Ohm

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

1.5A

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.2V @ 8μA

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

20V

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

175m Ω @ 1.5A, 4.5V

Published :

2001

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Compliant