BST39TA
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- Mfr.Part #
- BST39TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A SOT89-3
- Stock
- 34,502
- In Stock ：
- 34,502
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- R-PSSO-F3
- Current Rating :
- 500mA
- Power Dissipation :
- 1W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 500mV
- Base Part Number :
- BST39
- Height :
- 1.5mm
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 15 Weeks
- Qualification Status :
- Not Qualified
- Length :
- 4.5mm
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- hFE Min :
- 40
- Gain Bandwidth Product :
- 70MHz
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 350V
- Continuous Collector Current :
- 500mA
- Max Collector Current :
- 500mA
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Pbfree Code :
- yes
- Number of Pins :
- 4
- Frequency :
- 70MHz
- Max Breakdown Voltage :
- 350V
- Weight :
- 51.993025mg
- Transition Frequency :
- 70MHz
- Published :
- 2000
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Collector Base Voltage (VCBO) :
- 400V
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 1W
- JESD-609 Code :
- e3
- Package / Case :
- TO-243AA
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Packaging :
- Cut Tape (CT)
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 350V
- Mounting Type :
- Surface Mount
- Width :
- 2.5mm
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Collector Emitter Breakdown Voltage :
- 350V
- Datasheets
- BST39TA
NPN -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Cut Tape (CT) Surface Mount
BST39TA Overview
In this device, the DC current gain is 40 @ 20mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 4mA, 50mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 70MHz.Input voltage breakdown is available at 350V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BST39TA Features
the DC current gain for this device is 40 @ 20mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 70MHz
BST39TA Applications
There are a lot of Diodes Incorporated
BST39TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BST39,115 | Diodes Incorporated | 75,002 | TRANS NPN 350V 0.1A SOT89 |
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