BST15,115
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- Mfr.Part #
- BST15,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 200V 0.2A SOT89-3
- Stock
- 13,490
- In Stock ：
- 13,490
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 5mA, 50mA
- Frequency - Transition :
- 15MHz
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP
- Pin Count :
- 3
- Published :
- 1998
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Unknown
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Flat
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 50mA 10V
- Terminal Finish :
- Tin
- Configuration :
- Single
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 200mA
- JESD-30 Code :
- R-PSSO-F3
- Number of Elements :
- 1
- Package / Case :
- TO-243AA
- Polarity/Channel Type :
- PNP
- Power Dissipation-Max (Abs) :
- 1W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- yes
- Voltage - Collector Emitter Breakdown (Max) :
- 200V
- Terminal Position :
- Single
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 15MHz
- Base Part Number :
- BST15
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Power - Max :
- 1.3W
- Case Connection :
- COLLECTOR
- Datasheets
- BST15,115
SOT89.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
BST15,115 Overview
This device has a DC current gain of 30 @ 50mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 750mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 15MHz.Collector Emitter Breakdown occurs at 200VV - Maximum voltage.
BST15,115 Features
the DC current gain for this device is 30 @ 50mA 10V
the vce saturation(Max) is 750mV @ 5mA, 50mA
a transition frequency of 15MHz
BST15,115 Applications
There are a lot of NXP USA Inc.
BST15,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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