BSS4130AT116
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- Mfr.Part #
- BSS4130AT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A SST3
- Stock
- 2,152
- In Stock ：
- 2,152
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 13 Weeks
- Frequency - Transition :
- 400MHz
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 25mA, 500mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 200mW
- Current - Collector (Ic) (Max) :
- 1A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- BSS4130AT116
NPN 150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSS4130AT116 Overview
In this device, the DC current gain is 270 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 25mA, 500mA.The device exhibits a collector-emitter breakdown at 30V.
BSS4130AT116 Features
the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 350mV @ 25mA, 500mA
BSS4130AT116 Applications
There are a lot of ROHM Semiconductor
BSS4130AT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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