BSR50
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- Mfr.Part #
- BSR50
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN DARL 45V 1.5A TO92-3
- Stock
- 18,064
- In Stock ：
- 18,064
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 1.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN - Darlington
- Packaging :
- Bulk
- Published :
- 2004
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 4mA, 1A
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Power - Max :
- 625mW
- Reach Compliance Code :
- Compliant
- Datasheets
- BSR50
,TO-226_straightlead.jpg)
NPN - Darlington -55°C~150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BSR50 Overview
In this device, the DC current gain is 2000 @ 500mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 4mA, 1A.There is a 45V maximal voltage in the device due to collector-emitter breakdown.
BSR50 Features
the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.6V @ 4mA, 1A
BSR50 Applications
There are a lot of ON Semiconductor
BSR50 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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