BSP372L6327HTSA1
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- Mfr.Part #
- BSP372L6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 1.7A SOT223-4
- Stock
- 37,453
- In Stock ：
- 37,453
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 50 ns
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Continuous Drain Current (ID) :
- 1.7A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- Number of Elements :
- 1
- Power Dissipation-Max :
- 1.8W Ta
- Package / Case :
- TO-261-4, TO-261AA
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 1.8W
- Rds On (Max) @ Id, Vgs :
- 310mOhm @ 1.7A, 5V
- Input Capacitance :
- 520pF
- Current - Continuous Drain (Id) @ 25°C :
- 1.7A Ta
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Gate to Source Voltage (Vgs) :
- 14V
- Min Operating Temperature :
- -55°C
- Mount :
- Surface Mount
- Supplier Device Package :
- PG-SOT223-4
- Rise Time :
- 35ns
- Vgs (Max) :
- ±14V
- Drain to Source Voltage (Vdss) :
- 100V
- Rds On Max :
- 310 mΩ
- Series :
- SIPMOS®
- Published :
- 2001
- Input Capacitance (Ciss) (Max) @ Vds :
- 520pF @ 25V
- Turn-Off Delay Time :
- 110 ns
- Number of Pins :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Radiation Hardening :
- No
- Turn On Delay Time :
- 20 ns
- FET Type :
- N-Channel
- Datasheets
- BSP372L6327HTSA1
N-Channel Tape & Reel (TR) 310mOhm @ 1.7A, 5V ±14V 520pF @ 25V 100V TO-261-4, TO-261AA
BSP372L6327HTSA1 Overview
A device's maximum input capacitance is 520pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 1.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 110 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 14V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (5V) to reduce its overall power consumption.
BSP372L6327HTSA1 Features
a continuous drain current (ID) of 1.7A
the turn-off delay time is 110 ns
a 100V drain to source voltage (Vdss)
BSP372L6327HTSA1 Applications
There are a lot of Infineon Technologies
BSP372L6327HTSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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