BSP320SH6327XTSA1
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- Mfr.Part #
- BSP320SH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 2.9A SOT223-4
- Stock
- 42,322
- In Stock ：
- 42,322
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 11 ns
- Additional Feature :
- AVALANCHE RATED
- Width :
- 3.5mm
- Rise Time :
- 25ns
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2007
- Vgs(th) (Max) @ Id :
- 4V @ 20µA
- Height :
- 1.6mm
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Contact Plating :
- Tin
- Number of Terminations :
- 4
- Series :
- SIPMOS™
- Threshold Voltage :
- 3V
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Power Dissipation :
- 1.8W
- Number of Pins :
- 4
- Halogen Free :
- Halogen Free
- Pin Count :
- 4
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Max Dual Supply Voltage :
- 60V
- Continuous Drain Current (ID) :
- 2.9A
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 2.9A, 10V
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 2.9A Tj
- Length :
- 6.5mm
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 1.8W Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Factory Lead Time :
- 10 Weeks
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 340pF @ 25V
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 25 ns
- Lead Free :
- Lead Free
- Recovery Time :
- 56 ns
- Terminal Position :
- Dual
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-261-4, TO-261AA
- Fall Time (Typ) :
- 35 ns
- Datasheets
- BSP320SH6327XTSA1
N-Channel Tape & Reel (TR) 120m Ω @ 2.9A, 10V ±20V 340pF @ 25V 12nC @ 10V TO-261-4, TO-261AA
BSP320SH6327XTSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 60 mJ.A device's maximum input capacitance is 340pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2.9A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 60V, it supports maximum dual supply voltages.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3V.This device uses no drive voltage (10V) to reduce its overall power consumption.
BSP320SH6327XTSA1 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 2.9A
the turn-off delay time is 25 ns
a threshold voltage of 3V
BSP320SH6327XTSA1 Applications
There are a lot of Infineon Technologies
BSP320SH6327XTSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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