BSP32,115
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- Mfr.Part #
- BSP32,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- NEXPERIA BSP32 - POWER BIPOLAR T
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 1.3W
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Turn On Time-Max (ton) :
- 500ns
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Collector Base Voltage (VCBO) :
- 90V
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Base Part Number :
- BSP32
- Collector Emitter Breakdown Voltage :
- 80V
- Transition Frequency :
- 100MHz
- Number of Pins :
- 73
- Max Breakdown Voltage :
- 80V
- Factory Lead Time :
- 4 Weeks
- Published :
- 2009
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 100mA 5V
- Max Collector Current :
- 1A
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Pin Count :
- 4
- Terminal Position :
- Dual
- Power Dissipation :
- 1.3W
- Package / Case :
- TO-261-4, TO-261AA
- Gain Bandwidth Product :
- 100MHz
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PDSO-G4
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Turn Off Time-Max (toff) :
- 650ns
- Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Collector-Base Capacitance-Max :
- 20pF
- Datasheets
- BSP32,115
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP32,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 100mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 1A volts.
BSP32,115 Features
the DC current gain for this device is 40 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BSP32,115 Applications
There are a lot of Nexperia USA Inc.
BSP32,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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