BSP32,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Turn Off Time-Max (toff) :

650ns

Max Power Dissipation :

1.3W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Published :

2009

Package / Case :

TO-261-4, TO-261AA

Collector-Base Capacitance-Max :

20pF

Transistor Element Material :

SILICON

Mount :

Surface Mount

Transistor Type :

PNP

Operating Temperature :

150°C TJ

Base Part Number :

BSP32

JESD-30 Code :

R-PDSO-G4

Frequency :

100MHz

Packaging :

Tape and Reel (TR)

Number of Pins :

73

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 100mA 5V

Transition Frequency :

100MHz

Collector Base Voltage (VCBO) :

90V

Element Configuration :

Single

Case Connection :

COLLECTOR

Contact Plating :

Tin

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

80V

Factory Lead Time :

4 Weeks

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Polarity/Channel Type :

PNP

Terminal Position :

Dual

Number of Terminations :

4

JESD-609 Code :

e3

Pin Count :

4

Turn On Time-Max (ton) :

500ns

Max Collector Current :

1A

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Surface Mount

Number of Elements :

1

Gain Bandwidth Product :

100MHz

Power Dissipation :

1.3W

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Breakdown Voltage :

80V

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

80V