BSP32,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

80V

Terminal Position :

Dual

Max Breakdown Voltage :

80V

Number of Terminations :

4

Contact Plating :

Tin

Collector Base Voltage (VCBO) :

90V

Factory Lead Time :

4 Weeks

Case Connection :

COLLECTOR

Element Configuration :

Single

Pin Count :

4

Gain Bandwidth Product :

100MHz

Number of Elements :

1

Turn Off Time-Max (toff) :

650ns

Polarity/Channel Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Collector-Base Capacitance-Max :

20pF

Max Collector Current :

1A

RoHS Status :

ROHS3 Compliant

Transition Frequency :

100MHz

Emitter Base Voltage (VEBO) :

5V

Radiation Hardening :

No

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JESD-609 Code :

e3

Number of Pins :

73

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G4

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

80V

Package / Case :

TO-261-4, TO-261AA

Published :

2009

Frequency :

100MHz

Transistor Type :

PNP

Base Part Number :

BSP32

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 100mA 5V

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Max Power Dissipation :

1.3W

Current - Collector Cutoff (Max) :

100nA ICBO

Turn On Time-Max (ton) :

500ns

Terminal Form :

Gull wing

Power Dissipation :

1.3W