BSP31,115
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- Mfr.Part #
- BSP31,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT223
- Stock
- 1,558
- In Stock ：
- 1,558
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Pin Count :
- 4
- Length :
- 6.35mm
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 1.3W
- Mount :
- Surface Mount
- Weight :
- 4.535924g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Pins :
- 4
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-261-4, TO-261AA
- hFE Min :
- 100
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- BSP31
- Max Breakdown Voltage :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Number of Terminations :
- 4
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Published :
- 2009
- Height :
- 6.35mm
- Collector Emitter Voltage (VCEO) :
- 60V
- Mounting Type :
- Surface Mount
- Width :
- 6.35mm
- Max Power Dissipation :
- 1.3W
- Max Collector Current :
- 1A
- Turn On Time-Max (ton) :
- 500ns
- Transition Frequency :
- 100MHz
- Frequency :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Collector-Base Capacitance-Max :
- 20pF
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 70V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Termination :
- SMD/SMT
- Turn Off Time-Max (toff) :
- 650ns
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 100MHz
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- REACH SVHC :
- No SVHC
- Datasheets
- BSP31,115
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP31,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 1A volts.
BSP31,115 Features
the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BSP31,115 Applications
There are a lot of Nexperia USA Inc.
BSP31,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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