BSF134N10NJ3 G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

2.7V

Number of Terminations :

2

Series :

OptiMOS™

Power Dissipation :

2.2W

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Factory Lead Time :

26 Weeks

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Halogen Free :

Halogen Free

Vgs(th) (Max) @ Id :

3.5V @ 40μA

Package / Case :

3-WDSON

Max Dual Supply Voltage :

100V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Input Capacitance (Ciss) (Max) @ Vds :

2300pF @ 50V

Drain Current-Max (Abs) (ID) :

9A

Current - Continuous Drain (Id) @ 25°C :

9A Ta 40A Tc

Pbfree Code :

yes

Lead Free :

Lead Free

Contact Plating :

Silver

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Power Dissipation-Max :

2.2W Ta 43W Tc

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-MBCC-N2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Operating Temperature :

-40°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Pin Count :

2

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Terminal Position :

BOTTOM

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

JESD-609 Code :

e4

Terminal Form :

NO LEAD

Continuous Drain Current (ID) :

9A

Rise Time :

6ns

Case Connection :

DRAIN

Number of Pins :

7

Rds On (Max) @ Id, Vgs :

13.4m Ω @ 30A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2011