BSF110N06NT3GXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Number of Pins :

2

Max Junction Temperature (Tj) :

150 °C

Power Dissipation (Max) :

38W (Tc)

Turn-Off Delay Time :

17 ns

Drain to Source Resistance :

8.6 mΩ

FET Type :

N-Channel

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

3700 pF @ 30 V

Turn-On Delay Time :

11 ns

Drive Voltage (Max Rds On, Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

46 nC @ 10 V

Technology :

MOSFET (Metal Oxide)

RoHS :

Compliant

Series :

OptiMOS™ 3

FET Feature :

-

Package :

Bulk

Package / Case :

DirectFET™ Isometric ST

Vgs(th) (Max) @ Id :

4V @ 33µA

Mount :

Surface Mount

Rise Time :

2 ns

Continuous Drain Current (ID) :

11 A

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20 V

Power Dissipation :

2.2

Operating Temperature :

-40°C ~ 150°C (TJ)

Height :

700 µm

Max Operating Temperature :

150 °C

Continuous Drain Current Id :

47

Supplier Device Package :

MG-WDSON-2

Min Operating Temperature :

-40 °C

Product Status :

Active

Rds On (Max) @ Id, Vgs :

11mOhm @ 30A, 10V

Drain to Source Voltage (Vdss) :

60 V

Drain to Source Breakdown Voltage :

60 V

Number of Channels :

1

Channel Type :

N

Current - Continuous Drain (Id) @ 25°C :

47A (Tc)