BR25L020FVJ-WE2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Width :

3mm

Memory Format :

EEPROM

Operating Temperature :

-40°C~85°C TA

Pbfree Code :

yes

Endurance :

1000000 Write/Erase Cycles

Organization :

256X8

Mount :

Surface Mount

Pin Count :

8

Operating Supply Voltage :

5V

Memory Width :

8

Operating Mode :

SYNCHRONOUS

Mounting Type :

Surface Mount

Height Seated (Max) :

1.05mm

Supply Voltage :

2.5V

Packaging :

Tape and Reel (TR)

Supply Current-Max :

0.003mA

Terminal Position :

Dual

Number of Terminations :

8

Memory Type :

Non-Volatile

Standby Current-Max :

0.000002A

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Base Part Number :

BR25L020

Peak Reflow Temperature (Cel) :

260

Density :

2 kb

Published :

2005

Access Time :

5 μs

Data Retention Time-Min :

40

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Supply Voltage-Min (Vsup) :

1.8V

Voltage - Supply :

1.8V~5.5V

Clock Frequency :

5MHz

JESD-30 Code :

S-PDSO-G8

Memory Interface :

SPI

Serial Bus Type :

SPI

Lead Free :

Lead Free

Contact Plating :

Copper, Tin

Length :

3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Functions :

1

Interface :

SPI, Serial

Terminal Pitch :

0.65mm

Terminal Finish :

TIN COPPER

JESD-609 Code :

e2

Write Cycle Time - Word, Page :

5ms

Write Protection :

Hardware

Memory Size :

2Kb 256 x 8

Write Cycle Time-Max (tWC) :

5ms

HTS Code :

8542.32.00.51

Time@Peak Reflow Temperature-Max (s) :

10

ECCN Code :

EAR99