BR25L010FJ-WE2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Pin Count :

8

Supply Current-Max :

0.003mA

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G8

Clock Frequency :

5MHz

Mounting Type :

Surface Mount

Power Supplies :

2/5V

Length :

4.9mm

Data Retention Time-Min :

40

Memory Density :

1024 bit

Number of Functions :

1

Time@Peak Reflow Temperature-Max (s) :

10

Memory Size :

1Kb 128 x 8

Parallel/Serial :

Serial

Supply Voltage :

2.5V

Organization :

128X8

HTS Code :

8542.32.00.51

Number of Terminations :

8

Memory Width :

8

Supply Voltage-Min (Vsup) :

1.8V

Serial Bus Type :

SPI

Memory Type :

Non-Volatile

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e2

Supply Voltage-Max (Vsup) :

5.5V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Write Cycle Time-Max (tWC) :

5ms

Endurance :

1000000 Write/Erase Cycles

Height Seated (Max) :

1.65mm

Memory Format :

EEPROM

Packaging :

Tape and Reel (TR)

Published :

2010

Write Cycle Time - Word, Page :

5ms

Pbfree Code :

yes

Standby Current-Max :

0.000002A

Memory Interface :

SPI

Width :

3.9mm

Write Protection :

Hardware

Operating Mode :

SYNCHRONOUS

Terminal Pitch :

1.27mm

Operating Temperature :

-40°C~85°C TA

Voltage - Supply :

1.8V~5.5V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Surface Mount :

yes

Base Part Number :

BR25L010

Terminal Position :

Dual

Qualification Status :

Not Qualified

Terminal Finish :

TIN COPPER