BR25H080FJ-WCE2
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- Mfr.Part #
- BR25H080FJ-WCE2
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC EEPROM 8KBIT SPI 5MHZ 8SOPJ
- Stock
- 13,502
- In Stock ：
- 13,502
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Memory
- Write Protection :
- Hardware
- RoHS Status :
- ROHS3 Compliant
- Write Cycle Time - Word, Page :
- 5ms
- Number of Functions :
- 1
- Factory Lead Time :
- 6 Weeks
- Serial Bus Type :
- SPI
- Base Part Number :
- BR25H080
- HTS Code :
- 8542.32.00.51
- Radiation Hardening :
- No
- Supply Current-Max :
- 0.003mA
- Pin Count :
- 8
- Endurance :
- 1000000 Write/Erase Cycles
- Terminal Position :
- Dual
- Memory Format :
- EEPROM
- JESD-30 Code :
- R-PDSO-G8
- Clock Frequency :
- 5MHz
- Memory Width :
- 8
- Supply Voltage-Min (Vsup) :
- 2.5V
- Mount :
- Surface Mount
- Number of Terminations :
- 8
- Terminal Pitch :
- 1.27mm
- Width :
- 3.9mm
- Height Seated (Max) :
- 1.65mm
- Memory Size :
- 8Kb 1K x 8
- Mounting Type :
- Surface Mount
- Series :
- Automotive, AEC-Q100
- Packaging :
- Tape and Reel (TR)
- Length :
- 4.9mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Operating Temperature :
- -40°C~125°C TA
- ECCN Code :
- EAR99
- Interface :
- SPI, Serial
- Data Retention Time-Min :
- 40
- Density :
- 8 kB
- Organization :
- 1KX8
- Memory Interface :
- SPI
- Power Supplies :
- 3/5V
- Supply Voltage :
- 5V
- Write Cycle Time-Max (tWC) :
- 5ms
- Memory Type :
- Non-Volatile
- Pbfree Code :
- yes
- Standby Current-Max :
- 0.00001A
- Supply Voltage-Max (Vsup) :
- 5.5V
- Voltage - Supply :
- 2.5V~5.5V
- Datasheets
- BR25H080FJ-WCE2
Memory ROHM Semiconductor BR25H080FJ-WCE2 Overview
The ROHM Semiconductor BR25H080FJ-WCE2 is an integrated circuit designed for reliable, high-speed data storage. As an 8Kbit Electrically Erasable Programmable Read-Only Memory (EEPROM), this component operates on a Serial Peripheral Interface (SPI) with a clock frequency of up to 5MHz, encapsulated in an efficient 8SOPJ package. This Memory ROHM Semiconductor BR25H080FJ-WCE2 chip is engineered to provide a durable and stable non-volatile memory solution for sophisticated electronic systems. It boasts excellent data retention and can be operated across a wide range of temperatures, making it a versatile choice for multiple industrial applications. Additionally, its low power consumption and high-speed data access features meet the demands of various high-performance operations, facilitating a broad spectrum of B2B clients seeking robust memory components for volume integration.
BR25H080FJ-WCE2 Features
- 8Kbit EEPROM capacity offering ample storage for configuration data and device parameters.
- SPI Interface with a 5MHz operating frequency facilitates swift data transfer rates.
- Operational across a broad temperature range, suitable for harsh environments.
- Compact 8SOPJ package is space-efficient and ideal for size-constrained applications.
- Low power consumption supporting energy-sensitive designs.
- Automatic erase and write functionality for ease of integration and use.
BR25H080FJ-WCE2 Applications
- Automotive Electronics: Utilized in vehicle systems for storing critical non-volatile data that requires endurance over a wide temperature range and long-term reliability.
- Portable Devices: Incorporated into portable electronic devices requiring efficient, low-power memory storage for user profiles, preferences, and device configurations.
- Industrial Controls: Applied in managing configuration data within industrial automation systems, ensuring smooth operation even in demanding environments.
- Consumer Electronics: Embedded in a variety of consumer electronics, such as smart home devices, to provide dependable memory for firmware and application settings.
- Medical Equipment: Integrated into medical devices where accurate data retention is critical for patient safety and equipment functionality.
- Telecommunications: Employed in telecommunication infrastructure to maintain essential data amid constant operation and occasional power fluctuations.
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