BR25G512F-3GE2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Supply Voltage-Max (Vsup) :

5.5V

Operating Temperature :

-40°C~85°C TA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Memory Density :

524288 bit

Parallel/Serial :

Serial

Terminal Position :

Dual

Height Seated (Max) :

1.71mm

Number of Terminations :

8

Clock Frequency :

10MHz

Length :

5mm

Additional Feature :

SEATED HT-CALCULATED

Memory Width :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Memory Type :

Non-Volatile

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Memory Format :

EEPROM

Memory Interface :

SPI

RoHS Status :

ROHS3 Compliant

Operating Mode :

SYNCHRONOUS

Mounting Type :

Surface Mount

Write Cycle Time-Max (tWC) :

5ms

Organization :

64KX8

Surface Mount :

yes

Width :

4.4mm

Voltage - Supply :

1.8V~5.5V

Factory Lead Time :

9 Weeks

Write Cycle Time - Word, Page :

5ms

Serial Bus Type :

SPI

Packaging :

Cut Tape (CT)

JESD-30 Code :

R-PDSO-G8

Memory Size :

512Kb 64K x 8

Supply Voltage-Min (Vsup) :

1.8V

Terminal Pitch :

1.27mm

Package / Case :

8-SOIC (0.173, 4.40mm Width)

Number of Functions :

1