BR25A512F-3MGE2

Manufacturer :

ROHM Semiconductor

Product Category :

Memory

Memory Interface :

SPI

Additional Feature :

SEATED HT-CALCULATED

Write Cycle Time - Word, Page :

5ms

Supply Voltage-Min (Vsup) :

2.5V

Height Seated (Max) :

1.71mm

Number of Functions :

1

RoHS Status :

ROHS3 Compliant

Operating Mode :

SYNCHRONOUS

Write Cycle Time-Max (tWC) :

5ms

Serial Bus Type :

SPI

Operating Temperature :

-40°C~105°C TA

Memory Size :

512Kb 64K x 8

Voltage - Supply :

2.5V~5.5V

JESD-30 Code :

R-PDSO-G8

Memory Format :

EEPROM

Memory Width :

8

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.4mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Memory Type :

Non-Volatile

Terminal Position :

Dual

Terminal Pitch :

1.27mm

Clock Frequency :

10MHz

Factory Lead Time :

10 Weeks

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Length :

5mm

Number of Terminations :

8

Parallel/Serial :

Serial

Package / Case :

8-SOIC (0.173, 4.40mm Width)

Packaging :

Cut Tape (CT)

Published :

2015

Supply Voltage-Max (Vsup) :

5.5V

Organization :

64KX8

Memory Density :

524288 bit